diff --git a/NPSimulation/AnnularS1/AnnularS1.cc b/NPSimulation/AnnularS1/AnnularS1.cc
index 3020106feab08dcd42cdc226d947e4ee68f46787..1bbfe1b94b07f5077fd68aeb216f75119bcae638 100644
--- a/NPSimulation/AnnularS1/AnnularS1.cc
+++ b/NPSimulation/AnnularS1/AnnularS1.cc
@@ -39,7 +39,8 @@
#include "G4Transform3D.hh"
#include "G4PVPlacement.hh"
#include "G4PVDivision.hh"
-
+#include "G4ExtrudedSolid.hh"
+#include "G4SubtractionSolid.hh"
// G4 sensitive
#include "G4SDManager.hh"
#include "G4MultiFunctionalDetector.hh"
@@ -102,20 +103,7 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
G4double density = 0. , a = 0, z = 0 ;
G4int ncomponents = 0, natoms = 0 ;
- G4Element* H = new G4Element("Hydrogen" , symbol = "H" , z = 1 , a = 1.01 * g / mole);
- G4Element* C = new G4Element("Carbon" , symbol = "C" , z = 6 , a = 12.011 * g / mole);
- G4Element* N = new G4Element("Nitrogen" , symbol = "N" , z = 7 , a = 14.01 * g / mole);
- G4Element* O = new G4Element("Oxigen" , symbol = "O" , z = 8 , a = 16.00 * g / mole);
- G4Element* I = new G4Element("Iode" , symbol = "I" , z = 53 , a = 126.9 * g / mole);
- G4Element* Cs = new G4Element("Cesium" , symbol = "Cs" , z = 55 , a = 132.9 * g / mole);
-
- G4Element* Co = new G4Element("Cobalt" , symbol = "Co" , z = 27 , a = 58.933 * g / mole);
- G4Element* Cr = new G4Element("Cromium" , symbol = "Cr" , z = 24 , a = 51.996 * g / mole);
- G4Element* Ni = new G4Element("Nickel" , symbol = "Ni" , z = 28 , a = 58.69 * g / mole);
- G4Element* Fe = new G4Element("Iron" , symbol = "Fe" , z = 26 , a = 55.847 * g / mole);
- G4Element* W = new G4Element("Tungsten" , symbol = "W" , z = 74 , a = 183.5 * g / mole);
-
- ////////////////////////////////////////////////////////////////
+ ////////////////////////////////////////////////////////////////
/////////////////Material Definition ///////////////////////////
////////////////////////////////////////////////////////////////
// Si
@@ -131,6 +119,8 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
// Vacuum
density = 0.000000001 * mg / cm3;
G4Material* Vacuum = new G4Material("Vacuum", density, ncomponents = 2);
+ G4Element* N = new G4Element("Nitrogen" , symbol = "N" , z = 7 , a = 14.01 * g / mole);
+ G4Element* O = new G4Element("Oxigen" , symbol = "O" , z = 8 , a = 16.00 * g / mole);
Vacuum->AddElement(N, .7);
Vacuum->AddElement(O, .3);
////////////////////////////////////////////////////////////////
@@ -139,14 +129,22 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
// Name of the module
G4String Name = "S1Annular" + DetectorNumber;
- // Definition of the volume containing the sensitive detector
- G4Tubs* solidAnnularS1 = new G4Tubs(Name,
- Rmin,
- Rmax,
- Length/2,
- 0*deg,
- 360*deg);
+ // Building the PCB
+ // The PCB is a simple extruded volume from 8reference point
+ vector<G4TwoVector> polygon;
+ for(unsigned int i = 0 ; i < 8 ; i++){
+ G4TwoVector Point(PCBPointsX[i],PCBPointsY[i]);
+ polygon.push_back(Point);
+ }
+
+ // Mast volume containing all the detector
+ G4ExtrudedSolid* solidAnnularS1 = new G4ExtrudedSolid(Name,
+ polygon,
+ PCBThickness*0.5,
+ G4TwoVector(0,0),1,
+ G4TwoVector(0,0),1);
+ // Definition of the volume containing the sensitive detector
G4LogicalVolume* logicAnnularS1 = new G4LogicalVolume(solidAnnularS1, Vacuum, Name, 0, 0, 0);
new G4PVPlacement(G4Transform3D(*rotation, position),
@@ -155,49 +153,128 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
world,
false,
0);
-
+
logicAnnularS1->SetVisAttributes(G4VisAttributes::Invisible);
+ // PCB Base
+ G4ExtrudedSolid* solidPCBBase = new G4ExtrudedSolid("PCBBase",
+ polygon,
+ PCBThickness*0.5,
+ G4TwoVector(0,0),1,
+ G4TwoVector(0,0),1);
+
+ // Wafer Shape to be substracted to the PCB
+ G4Tubs* solidWaferShapeBase = new G4Tubs("WaferShape",
+ WaferInnerRadius,
+ WaferOutterRadius,
+ PCBThickness,
+ 0*deg,
+ 360*deg);
+G4RotationMatrix* norotation = new G4RotationMatrix();
+
+ G4RotationMatrix* cutrotation = new G4RotationMatrix(G4ThreeVector(0,0,1),45*deg);
+ G4ThreeVector cutposition1(80*mm+WaferRCut,0,0); cutposition1.setPhi(45*deg);
+ G4Transform3D transform1(*cutrotation,cutposition1);
+
+ G4Box* solidCutout = new G4Box("cuttout",80*mm,80*mm,80*mm);
+
+ G4SubtractionSolid* solidWaferShape1 = new G4SubtractionSolid("WaferShape1",
+ solidWaferShapeBase,
+ solidCutout,
+ transform1);
+
+
+ G4ThreeVector cutposition2(-80*mm-WaferRCut,0,0); cutposition2.setPhi(-135*deg);
+ G4Transform3D transform2(*cutrotation,cutposition2);
+ G4SubtractionSolid* solidWaferShape = new G4SubtractionSolid("WaferShape",
+ solidWaferShape1,
+ solidCutout,
+ transform2);
+
+
+ // PCB final
+ G4SubtractionSolid* solidPCB1 = new G4SubtractionSolid("AnnularS1_PCB1",
+ solidPCBBase,
+ solidWaferShape);
+
+ G4Tubs* solidTub =
+ new G4Tubs("central_hole",0,PCBInnerRadius,PCBThickness,0,360*deg);
+ G4SubtractionSolid* solidPCB = new G4SubtractionSolid("AnnularS1_PCB",
+ solidPCB1,
+ solidTub);
+
+
+ G4LogicalVolume* logicPCB = new G4LogicalVolume(solidPCB, Vacuum, "AnnularS1_PCB", 0, 0, 0);
+
+ new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
+ logicPCB,
+ "AnnularS1_PCB",
+ logicAnnularS1,
+ false,
+ 0);
+
+ G4VisAttributes* PCBVisAtt = new G4VisAttributes(G4Colour(0.2, 0.5, 0.2)) ;
+ logicPCB->SetVisAttributes(PCBVisAtt);
+
+
+ // Wafer itself
+ G4Tubs* solidWaferBase = new G4Tubs("Wafer",
+ WaferInnerRadius,
+ WaferOutterRadius,
+ WaferThickness,
+ 0*deg,
+ 360*deg);
+
+ G4SubtractionSolid* solidWafer1 = new G4SubtractionSolid("Wafer1",
+ solidWaferBase,
+ solidCutout,
+ transform1);
+
+ G4SubtractionSolid* solidWafer = new G4SubtractionSolid("Wafer",
+ solidWafer1,
+ solidCutout,
+ transform2);
+
+ G4LogicalVolume* logicWafer = new G4LogicalVolume(solidWafer, Silicon, "AnnularS1_Wafer", 0, 0, 0);
+ new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
+ logicWafer,
+ "AnnularS1_Wafer",
+ logicAnnularS1,
+ false,
+ 0);
- // Aluminium dead layers
- G4ThreeVector positionAluStripFront = G4ThreeVector(0, 0, AluStripFront_PosZ);
- G4ThreeVector positionAluStripBack = G4ThreeVector(0, 0, AluStripBack_PosZ);
-
- G4Tubs* solidAluStrip = new G4Tubs("AluBox",
- FirstStageRmin,
- FirstStageRmax,
- AluStripThickness/2,
- 0*deg,
- 360*deg);
-
- G4LogicalVolume* logicAluStrip = new G4LogicalVolume(solidAluStrip, Aluminium, "logicAluStrip", 0, 0, 0);
-
- new G4PVPlacement(0, positionAluStripFront, logicAluStrip, Name + "_AluStripFront", logicAnnularS1, false, 0);
- new G4PVPlacement(0, positionAluStripBack, logicAluStrip, Name + "_AluStripBack", logicAnnularS1, false, 0);
-
- logicAluStrip->SetVisAttributes(G4VisAttributes::Invisible);
-
- // Silicon detector itself
- G4ThreeVector positionSilicon = G4ThreeVector(0, 0, Silicon_PosZ);
-
- G4Tubs* solidSilicon = new G4Tubs("solidSilicon",
- FirstStageRmin,
- FirstStageRmax,
- FirstStageThickness/2,
- 0*deg,
- 360*deg);
-
- G4LogicalVolume* logicSilicon = new G4LogicalVolume(solidSilicon, Silicon, "logicSilicon", 0, 0, 0);
-
- new G4PVPlacement(0, positionSilicon, logicSilicon, Name + "_Silicon", logicAnnularS1, false, 0);
-
- // Set Silicon strip sensible
- logicSilicon->SetSensitiveDetector(m_Scorer);
-
- ///Visualisation of Silicon Strip
-// G4VisAttributes* SiliconVisAtt = new G4VisAttributes(G4Colour(0.5, 0.5, 0.5));
- G4VisAttributes* SiliconVisAtt = new G4VisAttributes(G4Colour(0.3, 0.3, 0.3));
- logicSilicon->SetVisAttributes(SiliconVisAtt);
+ G4VisAttributes* SiVisAtt = new G4VisAttributes(G4Colour(0.3, 0.3, 0.3)) ;
+ logicWafer->SetVisAttributes(SiVisAtt);
+
+ // Active Wafer
+ G4Tubs* solidActiveWaferBase = new G4Tubs("ActiveWafer",
+ ActiveWaferInnerRadius,
+ ActiveWaferOutterRadius,
+ WaferThickness,
+ 0*deg,
+ 360*deg);
+
+ G4SubtractionSolid* solidActiveWafer1 = new G4SubtractionSolid("ActiveWafer1",
+ solidActiveWaferBase,
+ solidCutout,
+ transform1);
+
+ G4SubtractionSolid* solidActiveWafer = new G4SubtractionSolid("ActiveWafer",
+ solidActiveWafer1,
+ solidCutout,
+ transform2);
+
+ G4LogicalVolume* logicActiveWafer = new G4LogicalVolume(solidActiveWafer, Silicon, "AnnularS1_ActiveWafer", 0, 0, 0);
+ new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
+ logicActiveWafer,
+ "AnnularS1_ActiveWafer",
+ logicWafer,
+ false,
+ 0);
+ logicActiveWafer->SetVisAttributes(SiVisAtt);
+
+ // Set Silicon strip sensible
+ logicActiveWafer->SetSensitiveDetector(m_Scorer);
}
diff --git a/NPSimulation/AnnularS1/AnnularS1.hh b/NPSimulation/AnnularS1/AnnularS1.hh
index 61aa963b3187eb5dce4f52f29c9cc2076554c1f5..8a68980118669f91fb9b7c522d2c44d3d7e7003c 100644
--- a/NPSimulation/AnnularS1/AnnularS1.hh
+++ b/NPSimulation/AnnularS1/AnnularS1.hh
@@ -117,30 +117,35 @@ namespace ANNULARS1
const G4double ResoFirstStage = 0 ;// = 52keV of Resolution // Unit is MeV/2.35
const G4double ResoSecondStage = 0.055 ;// = 130 keV of resolution // Unit is MeV/2.35
const G4double ResoThirdStage = 0 ;// = 100 keV of resolution // Unit is MeV/2.35
- const G4double ResoTimeGpd = 0.212765957 ;// = 500ps // Unit is ns/2.35
- const G4double ResoTimePPAC = 0.106382979 ;// = 250ps // Unit is ns/2.35
-
- // Geometry
- const G4double Rmin = 46/2*mm;
- const G4double Rmax = 100/2*mm;
-
- // First stage
+ const G4double ResoTimeGpd = 0.212765957 ;// = 500 ps // Unit is ns/2.35
+ const G4double ResoTimePPAC = 0.106382979 ;// = 250 ps // Unit is ns/2.35
+
+ // PCB
+ const G4double PCBPointsX[8]={-50,50,60,60,50,-50,-60,-60};
+ const G4double PCBPointsY[8]={60,60,50,-50,-60,-60,-50,50};
+ const G4double PCBThickness=2*mm;
+ const G4double PCBInnerRadius=20*mm;
+ // Wafer
+ const G4double WaferOutterRadius = 50*mm;
+ const G4double WaferInnerRadius = 23*mm;
+ const G4double WaferThickness = 500*micrometer;
+ const G4double WaferRCut = 45*mm;
+ const G4double ActiveWaferOutterRadius = 48*mm;
+ const G4double ActiveWaferInnerRadius = 24*mm;
const G4double AluStripThickness = 0.4*micrometer;
- const G4double FirstStageThickness = 500*micrometer;
- const G4double FirstStageRmin = 48/2*mm;
- const G4double FirstStageRmax = 96/2*mm;
// Characteristics
const G4int NbPhiStrips = 16;
const G4int NbThetaStrips = 16;
const G4int NbThetaQuadrant = 4;
- const G4double Length = AluStripThickness*2+FirstStageThickness;
+ // total WaferLength
+ const G4double Length = AluStripThickness*2+WaferThickness;
// Starting at the front and going in direction of third stage
const G4double AluStripFront_PosZ = Length* -0.5 + 0.5*AluStripThickness;
- const G4double Silicon_PosZ = AluStripFront_PosZ + 0.5*AluStripThickness + 0.5*FirstStageThickness;
- const G4double AluStripBack_PosZ = Silicon_PosZ + 0.5*FirstStageThickness + 0.5*AluStripThickness;
+ const G4double Silicon_PosZ = AluStripFront_PosZ + 0.5*AluStripThickness + 0.5*WaferThickness;
+ const G4double AluStripBack_PosZ = Silicon_PosZ + 0.5*WaferThickness + 0.5*AluStripThickness;
}
#endif
diff --git a/NPSimulation/AnnularS1/AnnularS1Scorers.cc b/NPSimulation/AnnularS1/AnnularS1Scorers.cc
index 1ca06959870e0ae86c6efdf00afb8e5ae8ef5949..35c1a72fed830c981d2e256132897778ae3086c3 100644
--- a/NPSimulation/AnnularS1/AnnularS1Scorers.cc
+++ b/NPSimulation/AnnularS1/AnnularS1Scorers.cc
@@ -70,8 +70,8 @@ G4bool AnnularS1ScorerThetaStripNumber::ProcessHits(G4Step* aStep, G4TouchableHi
// Theta strip pitch
// Interstrip should be taken into account here. To be done
- G4double ThetaStripPitch = (FirstStageRmax - FirstStageRmin) / NbThetaStrips;
- G4double dummy = (r - FirstStageRmin);
+ G4double ThetaStripPitch = (ActiveWaferOutterRadius - ActiveWaferInnerRadius) / NbThetaStrips;
+ G4double dummy = (r - ActiveWaferInnerRadius);
if (dummy < 0 && fabs(dummy) < 1e-6) dummy *= -1;
G4double ThetaStripNumber = floor(dummy / ThetaStripPitch);
ThetaStripNumber += PhiQuadrantNumber*NbThetaStrips;