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Commit f52123e2 authored by adrien-matta's avatar adrien-matta
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* More detailed Geometry fro Annular S1 

  - Wafer and PCB cutout
  - Active and Wafer geometry is accurate
  - PCB information need to be confirmed but are realistic
parent 101ebbd3
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NPSimulation/AnnularS1/AnnularS1.cc
+ 139
− 62
View file @ f52123e2
......@@ -39,7 +39,8 @@
#include "G4Transform3D.hh"
#include "G4PVPlacement.hh"
#include "G4PVDivision.hh"
#include "G4ExtrudedSolid.hh"
#include "G4SubtractionSolid.hh"
// G4 sensitive
#include "G4SDManager.hh"
#include "G4MultiFunctionalDetector.hh"
......@@ -102,20 +103,7 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
G4double density = 0. , a = 0, z = 0 ;
G4int ncomponents = 0, natoms = 0 ;
G4Element* H = new G4Element("Hydrogen" , symbol = "H" , z = 1 , a = 1.01 * g / mole);
G4Element* C = new G4Element("Carbon" , symbol = "C" , z = 6 , a = 12.011 * g / mole);
G4Element* N = new G4Element("Nitrogen" , symbol = "N" , z = 7 , a = 14.01 * g / mole);
G4Element* O = new G4Element("Oxigen" , symbol = "O" , z = 8 , a = 16.00 * g / mole);
G4Element* I = new G4Element("Iode" , symbol = "I" , z = 53 , a = 126.9 * g / mole);
G4Element* Cs = new G4Element("Cesium" , symbol = "Cs" , z = 55 , a = 132.9 * g / mole);
G4Element* Co = new G4Element("Cobalt" , symbol = "Co" , z = 27 , a = 58.933 * g / mole);
G4Element* Cr = new G4Element("Cromium" , symbol = "Cr" , z = 24 , a = 51.996 * g / mole);
G4Element* Ni = new G4Element("Nickel" , symbol = "Ni" , z = 28 , a = 58.69 * g / mole);
G4Element* Fe = new G4Element("Iron" , symbol = "Fe" , z = 26 , a = 55.847 * g / mole);
G4Element* W = new G4Element("Tungsten" , symbol = "W" , z = 74 , a = 183.5 * g / mole);
////////////////////////////////////////////////////////////////
////////////////////////////////////////////////////////////////
/////////////////Material Definition ///////////////////////////
////////////////////////////////////////////////////////////////
// Si
......@@ -131,6 +119,8 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
// Vacuum
density = 0.000000001 * mg / cm3;
G4Material* Vacuum = new G4Material("Vacuum", density, ncomponents = 2);
G4Element* N = new G4Element("Nitrogen" , symbol = "N" , z = 7 , a = 14.01 * g / mole);
G4Element* O = new G4Element("Oxigen" , symbol = "O" , z = 8 , a = 16.00 * g / mole);
Vacuum->AddElement(N, .7);
Vacuum->AddElement(O, .3);
////////////////////////////////////////////////////////////////
......@@ -139,14 +129,22 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
// Name of the module
G4String Name = "S1Annular" + DetectorNumber;
// Definition of the volume containing the sensitive detector
G4Tubs* solidAnnularS1 = new G4Tubs(Name,
Rmin,
Rmax,
Length/2,
0*deg,
360*deg);
// Building the PCB
// The PCB is a simple extruded volume from 8reference point
vector<G4TwoVector> polygon;
for(unsigned int i = 0 ; i < 8 ; i++){
G4TwoVector Point(PCBPointsX[i],PCBPointsY[i]);
polygon.push_back(Point);
}
// Mast volume containing all the detector
G4ExtrudedSolid* solidAnnularS1 = new G4ExtrudedSolid(Name,
polygon,
PCBThickness*0.5,
G4TwoVector(0,0),1,
G4TwoVector(0,0),1);
// Definition of the volume containing the sensitive detector
G4LogicalVolume* logicAnnularS1 = new G4LogicalVolume(solidAnnularS1, Vacuum, Name, 0, 0, 0);
new G4PVPlacement(G4Transform3D(*rotation, position),
......@@ -155,49 +153,128 @@ void AnnularS1::VolumeMaker(G4int DetecNumber,
world,
false,
0);
logicAnnularS1->SetVisAttributes(G4VisAttributes::Invisible);
// PCB Base
G4ExtrudedSolid* solidPCBBase = new G4ExtrudedSolid("PCBBase",
polygon,
PCBThickness*0.5,
G4TwoVector(0,0),1,
G4TwoVector(0,0),1);
// Wafer Shape to be substracted to the PCB
G4Tubs* solidWaferShapeBase = new G4Tubs("WaferShape",
WaferInnerRadius,
WaferOutterRadius,
PCBThickness,
0*deg,
360*deg);
G4RotationMatrix* norotation = new G4RotationMatrix();
G4RotationMatrix* cutrotation = new G4RotationMatrix(G4ThreeVector(0,0,1),45*deg);
G4ThreeVector cutposition1(80*mm+WaferRCut,0,0); cutposition1.setPhi(45*deg);
G4Transform3D transform1(*cutrotation,cutposition1);
G4Box* solidCutout = new G4Box("cuttout",80*mm,80*mm,80*mm);
G4SubtractionSolid* solidWaferShape1 = new G4SubtractionSolid("WaferShape1",
solidWaferShapeBase,
solidCutout,
transform1);
G4ThreeVector cutposition2(-80*mm-WaferRCut,0,0); cutposition2.setPhi(-135*deg);
G4Transform3D transform2(*cutrotation,cutposition2);
G4SubtractionSolid* solidWaferShape = new G4SubtractionSolid("WaferShape",
solidWaferShape1,
solidCutout,
transform2);
// PCB final
G4SubtractionSolid* solidPCB1 = new G4SubtractionSolid("AnnularS1_PCB1",
solidPCBBase,
solidWaferShape);
G4Tubs* solidTub =
new G4Tubs("central_hole",0,PCBInnerRadius,PCBThickness,0,360*deg);
G4SubtractionSolid* solidPCB = new G4SubtractionSolid("AnnularS1_PCB",
solidPCB1,
solidTub);
G4LogicalVolume* logicPCB = new G4LogicalVolume(solidPCB, Vacuum, "AnnularS1_PCB", 0, 0, 0);
new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
logicPCB,
"AnnularS1_PCB",
logicAnnularS1,
false,
0);
G4VisAttributes* PCBVisAtt = new G4VisAttributes(G4Colour(0.2, 0.5, 0.2)) ;
logicPCB->SetVisAttributes(PCBVisAtt);
// Wafer itself
G4Tubs* solidWaferBase = new G4Tubs("Wafer",
WaferInnerRadius,
WaferOutterRadius,
WaferThickness,
0*deg,
360*deg);
G4SubtractionSolid* solidWafer1 = new G4SubtractionSolid("Wafer1",
solidWaferBase,
solidCutout,
transform1);
G4SubtractionSolid* solidWafer = new G4SubtractionSolid("Wafer",
solidWafer1,
solidCutout,
transform2);
G4LogicalVolume* logicWafer = new G4LogicalVolume(solidWafer, Silicon, "AnnularS1_Wafer", 0, 0, 0);
new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
logicWafer,
"AnnularS1_Wafer",
logicAnnularS1,
false,
0);
// Aluminium dead layers
G4ThreeVector positionAluStripFront = G4ThreeVector(0, 0, AluStripFront_PosZ);
G4ThreeVector positionAluStripBack = G4ThreeVector(0, 0, AluStripBack_PosZ);
G4Tubs* solidAluStrip = new G4Tubs("AluBox",
FirstStageRmin,
FirstStageRmax,
AluStripThickness/2,
0*deg,
360*deg);
G4LogicalVolume* logicAluStrip = new G4LogicalVolume(solidAluStrip, Aluminium, "logicAluStrip", 0, 0, 0);
new G4PVPlacement(0, positionAluStripFront, logicAluStrip, Name + "_AluStripFront", logicAnnularS1, false, 0);
new G4PVPlacement(0, positionAluStripBack, logicAluStrip, Name + "_AluStripBack", logicAnnularS1, false, 0);
logicAluStrip->SetVisAttributes(G4VisAttributes::Invisible);
// Silicon detector itself
G4ThreeVector positionSilicon = G4ThreeVector(0, 0, Silicon_PosZ);
G4Tubs* solidSilicon = new G4Tubs("solidSilicon",
FirstStageRmin,
FirstStageRmax,
FirstStageThickness/2,
0*deg,
360*deg);
G4LogicalVolume* logicSilicon = new G4LogicalVolume(solidSilicon, Silicon, "logicSilicon", 0, 0, 0);
new G4PVPlacement(0, positionSilicon, logicSilicon, Name + "_Silicon", logicAnnularS1, false, 0);
// Set Silicon strip sensible
logicSilicon->SetSensitiveDetector(m_Scorer);
///Visualisation of Silicon Strip
// G4VisAttributes* SiliconVisAtt = new G4VisAttributes(G4Colour(0.5, 0.5, 0.5));
G4VisAttributes* SiliconVisAtt = new G4VisAttributes(G4Colour(0.3, 0.3, 0.3));
logicSilicon->SetVisAttributes(SiliconVisAtt);
G4VisAttributes* SiVisAtt = new G4VisAttributes(G4Colour(0.3, 0.3, 0.3)) ;
logicWafer->SetVisAttributes(SiVisAtt);
// Active Wafer
G4Tubs* solidActiveWaferBase = new G4Tubs("ActiveWafer",
ActiveWaferInnerRadius,
ActiveWaferOutterRadius,
WaferThickness,
0*deg,
360*deg);
G4SubtractionSolid* solidActiveWafer1 = new G4SubtractionSolid("ActiveWafer1",
solidActiveWaferBase,
solidCutout,
transform1);
G4SubtractionSolid* solidActiveWafer = new G4SubtractionSolid("ActiveWafer",
solidActiveWafer1,
solidCutout,
transform2);
G4LogicalVolume* logicActiveWafer = new G4LogicalVolume(solidActiveWafer, Silicon, "AnnularS1_ActiveWafer", 0, 0, 0);
new G4PVPlacement(G4Transform3D(*norotation, G4ThreeVector()),
logicActiveWafer,
"AnnularS1_ActiveWafer",
logicWafer,
false,
0);
logicActiveWafer->SetVisAttributes(SiVisAtt);
// Set Silicon strip sensible
logicActiveWafer->SetSensitiveDetector(m_Scorer);
}
......
NPSimulation/AnnularS1/AnnularS1.hh
+ 19
− 14
View file @ f52123e2
......@@ -117,30 +117,35 @@ namespace ANNULARS1
const G4double ResoFirstStage = 0 ;// = 52keV of Resolution // Unit is MeV/2.35
const G4double ResoSecondStage = 0.055 ;// = 130 keV of resolution // Unit is MeV/2.35
const G4double ResoThirdStage = 0 ;// = 100 keV of resolution // Unit is MeV/2.35
const G4double ResoTimeGpd = 0.212765957 ;// = 500ps // Unit is ns/2.35
const G4double ResoTimePPAC = 0.106382979 ;// = 250ps // Unit is ns/2.35
// Geometry
const G4double Rmin = 46/2*mm;
const G4double Rmax = 100/2*mm;
// First stage
const G4double ResoTimeGpd = 0.212765957 ;// = 500 ps // Unit is ns/2.35
const G4double ResoTimePPAC = 0.106382979 ;// = 250 ps // Unit is ns/2.35
// PCB
const G4double PCBPointsX[8]={-50,50,60,60,50,-50,-60,-60};
const G4double PCBPointsY[8]={60,60,50,-50,-60,-60,-50,50};
const G4double PCBThickness=2*mm;
const G4double PCBInnerRadius=20*mm;
// Wafer
const G4double WaferOutterRadius = 50*mm;
const G4double WaferInnerRadius = 23*mm;
const G4double WaferThickness = 500*micrometer;
const G4double WaferRCut = 45*mm;
const G4double ActiveWaferOutterRadius = 48*mm;
const G4double ActiveWaferInnerRadius = 24*mm;
const G4double AluStripThickness = 0.4*micrometer;
const G4double FirstStageThickness = 500*micrometer;
const G4double FirstStageRmin = 48/2*mm;
const G4double FirstStageRmax = 96/2*mm;
// Characteristics
const G4int NbPhiStrips = 16;
const G4int NbThetaStrips = 16;
const G4int NbThetaQuadrant = 4;
const G4double Length = AluStripThickness*2+FirstStageThickness;
// total WaferLength
const G4double Length = AluStripThickness*2+WaferThickness;
// Starting at the front and going in direction of third stage
const G4double AluStripFront_PosZ = Length* -0.5 + 0.5*AluStripThickness;
const G4double Silicon_PosZ = AluStripFront_PosZ + 0.5*AluStripThickness + 0.5*FirstStageThickness;
const G4double AluStripBack_PosZ = Silicon_PosZ + 0.5*FirstStageThickness + 0.5*AluStripThickness;
const G4double Silicon_PosZ = AluStripFront_PosZ + 0.5*AluStripThickness + 0.5*WaferThickness;
const G4double AluStripBack_PosZ = Silicon_PosZ + 0.5*WaferThickness + 0.5*AluStripThickness;
}
#endif
......
NPSimulation/AnnularS1/AnnularS1Scorers.cc
+ 2
− 2
View file @ f52123e2
......@@ -70,8 +70,8 @@ G4bool AnnularS1ScorerThetaStripNumber::ProcessHits(G4Step* aStep, G4TouchableHi
// Theta strip pitch
// Interstrip should be taken into account here. To be done
G4double ThetaStripPitch = (FirstStageRmax - FirstStageRmin) / NbThetaStrips;
G4double dummy = (r - FirstStageRmin);
G4double ThetaStripPitch = (ActiveWaferOutterRadius - ActiveWaferInnerRadius) / NbThetaStrips;
G4double dummy = (r - ActiveWaferInnerRadius);
if (dummy < 0 && fabs(dummy) < 1e-6) dummy *= -1;
G4double ThetaStripNumber = floor(dummy / ThetaStripPitch);
ThetaStripNumber += PhiQuadrantNumber*NbThetaStrips;
......
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